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发信人: sucky (这念/'suki/,不要念错哦), 信区: material
标 题: 材科讲义(2)
发信站: 听涛站 (2001年06月06日18:18:58 星期三), 站内信件
§4. Interfacial energy
1. Physical basis
l rise of energy due to broken or distorted bonds
l rearrangement of atoms in structure and compositions
2. Specific interfacial free energy: g (p347)
l Internal energy in a system containing interfaces
dU = TdS - PdV + Smidni + gdA, eqn(5-89)
U = TS - PV + Smini + gA
g = U/A)S,V,Ni = G/A)P,T,Ni = F/A)V,T,Ni
l Excess quantity in a system α + β + interface
Uxs = U - Uα - Uβ, nixs = ni - nαi - nβi
Gxs = G - Gα - Gβ, Vxs = V - Vα - Vβ = 0
Gi = nxs/A, Us = Uex/A, Ss = Sex/A,
g = Us - TSs + SmiGi
l Unary system (C=1), p347, eqn(5-91); p417, eqn(7-3)
g = Gs (Fs) excess Gibbs energy per unit area
l Reversible work to increase the interface area by dA is
dW)T,P = dGxs = d(gA) = gdA + Adg. (C=1)
dW)T,P = gdA, when g/A)P,T = 0, p347
3. Surface tension (F/L) and surface stress tensor (fij)
fij = gdij + g/eij, (eij=strain tensor)
f = g + g/e, (isotropic)
Simple case: film extended by dA (g/A = g/e = 0)
dW = DG ? dW = Fdx = FdA/L = DG = gdA
\ F/L (N/m) equal in value to g (J/m2)
即: 通常所用表面张力与(比)表面(Gibbs自由)能的关系
4. Simple quantitative models
l Nearest-neighbor broken-bond model, p417
Assumptions: g " Us, e is not function of T
DHs (heat of sublimation) = U = ZNae/2
Us = (Snispise/2)/A
fcc {1 1 1}, A = D enclosed by <1 1 0>:
nis = 3/2 + 3/6 = 2, pis = 3
A = a2{?(2)′?(2)′[?(3)]/2}/2 = a2[?(3)]/2
Us = 2?(3)e/a2
Note: nis and pis will vary with {hkl}
Variation of Us with interface orientation, p 418,
A = 1 ′ a, q > 0
Snispis = (cosq + sinq)/a = ?(2)sin(p/4 +q)/a, Fig. 7-12
Us = (cosq + sinq)e/(2a2),
q = 0, p/2, Us = Usmin = e/(2a2), eqn (7-8)
q = p/4, Us = Usmax = e/[?(2)a2]
5. The Wulff plot and Wulff Construction, p419 Fig. 7-13
6. Small angle tilt grain boundaries, p419, Fig. 7-14
p301-302, eqn (4-107), p418, eqn(7-10)
g = g0q(A0 - lnq)
g0 = Gb/[4p(1 - n)], A0 = Ec4p(1 - n)/Gb2
§5. Equilibrium shape of grains and particles
1. Local equilibrium of facets: Fx = dg/dq eqn(7-29)
2. Balance of surface tension
g1/sinq1 = g2/sinq2 = g3/sinq3 eqn(7-37)
When g1 = g2 = g3, q1 = q2 = q3 = 120°
3. Embedded particles
l Effect of long range strain (Dv, Fig. 7-27)
l Effect of interfacial energy
Isotropic: spherical shape
Anisotropic: depends on Wulff construction
4. particles at grain boundaries p430-431
gαα = 2gαβcosq/2 q: dihedral angle (二面角)
* cos(x/2) = 1/[2sin(d/2)], cos(180 -y) = 1/[?(3)tg(d/2)]
§6. Equilibrium boundary segregation
1. equilibrium solute concentration C
G = (PUl + QUg) - KTln(W) p420 (no D)
In G/Q)P,T = 0, Ug - Ul = KTln{(n-Q)P/[Q(N-P)]}
Define: Co = P/N " P/(N-P),
C = Q/n " Q/(n-Q), DE = Na(Ug - Ul),
One gets C = Coexp(DE/RT) eqn(7-18)
Affect factors: DE(g, Cm, interfacial structure, other elements)
Co, T (process, heating T and cooling rate)
Example: Temper embrittlement in steels (Cr, Ni, Mn, Si)
Due to segregation of P, Sb, Sn, As…
Reversible by heating at ~500°C and quenching
2. Gibbs absorption Equation
From: dg = d(Us - TSs + SmiGi) and
dUs = TdSs + SmidGi + dg
We get: SsdT + SGidmi + dg = 0
For C = 2, dT = 0: GAdmA + GBdmB + dg = 0
Gibbs- Duhem eqn: xAdmA + xBdmB = 0, dmA/dmB = -xB/xA
Gibbs abortion eqn: -dg/dmB = GB - (xB/xA)GA
Choose surface so that GA = 0, and use Henry's rule
dmB = RTdlnaB = (RT/xB)dxB
GB = -(xB/RT)dg/dxB p422, eqn (7-19)
dg/dxB > 0, GB < 0; dg/dxB > 0, GB < 0
§7. Migration of interfaces p422
1. Migration velocity V = M·p
M = mobility eqn (7-22)
p = driving force : p = DG/Vm (N/m2)
2. Source of p, DG<0,
strain energy, chemical potential, curvature, etc.
3. Effect of boundary curvature (capillary effects)
2D: 2glsin(dq/2) = DplRdq ? Dp= g/R
3D: Dp= 2g/R [l = R2dq2; Dp = g/(1/R1 + 1/R2)]
Gibbs-Thomson effect: DG = Dp·Vm = 2g·Vm/R
driving force p = 2g/R
4. Factors affecting the mobility
l interfacial structure
steps and dislocations
degree of disorder
l solute atoms
solute drag effect
segregation
l secondary particles (grain refining by AlN in steels)
2g/R = fmaxNa = 3fg/2r
R* = 4r/3f
l temperature
diffusion M μ 1/T·exp(-1/T) eqn(7-22)
fraction of particles (f), segregation (Gi)
§8. Summary
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